KTC3265 [BL Galaxy Electrical]
NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
| 型号： | KTC3265 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | NPN Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTC3265
FEATURES
Pb
Lead-free
z
z
z
z
z
High DC current gain: hFE:100-320
Low saturation voltage.
Suitable for driver stage of small motor.
Complementary to KTC1298.
Small package.
APPLICATIONS
SOT-23
z
Low frequency power amplifier application.
z
Power switching application.
ORDERING INFORMATION
Type No.
KTC3265
Marking
EO/EY
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
V
Collector-Base Voltage
35
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
5
V
Collector Current -Continuous
Base Current
800
160
200
-55~150
mA
mA
mW
℃
IB
Collector Power Dissipation
Junction and Storage Temperature
PC
Tj,Tstg
Document number: BL/SSSTC109
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTC3265
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC=10mA,IE=0
35
V
V
V
V(BR)CEO
V(BR)EBO
IC=1mA,IB=0
IE=10mA,IC=0
30
5
ICBO
VCB=30V,IE=0
VEB=5V,IC=0
0.1
μA
μA
Emitter cut-off current
IEBO
0.1
320
0.5
DC current gain
hFE
VCE=1V,IC=100mA
100
Collector-emitter saturation voltage
IC=500mA, IB=20mA
VCE(sat)
V
VCE=5V, IC= 10mA
f=100MHz
Transition frequency
fT
120
13
MHz
pF
Collector output capacitance
VCB=10V,IE=0,f=1MHz
Cob
CLASSIFICATION OF hFE
Rank
O
Y
Range
100-200
EO
160-320
EY
Marking
Document number: BL/SSSTC109
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTC3265
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC109
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTC3265
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
A
SOT-23
Dim
A
Min
2.85
1.25
Max
2.95
1.35
E
K
B
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
J
D
G
G
H
J
H
0.1Typical
C
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
KTC3265
3000/Tape&Reel
Document number: BL/SSSTC109
Rev.A
www.galaxycn.com
4
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